In-nSiC schottky photodiode ; Fabrication and Study

In-nSiC schottky photodiode ; Fabrication and Study

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In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin Schisandra layer of In.electrical characteristics included I-V(dark and illumination ) have been investigated.Ideality factor is 1.6 andbarrier height is 0.53 eV was calculated from I-V and Isc-Voccharacteristics, Ideality factor is 1.

7 and barrier height found to be 0.64 eV,and from optoelectronic characteristics have found DEODORANT CITRUS sensitivity results showthat peak response of photodiode was 550nm.